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ZXMN6A09DN8 - 60V SO8 N-channel MOSFET

General Description

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage power management applications.

Key Features

  • Low on-resistance.
  • Fast switching speed.
  • Low threshold.
  • Low gate drive.
  • SOIC package D1 D2 G1 G2 S1 S2.

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Full PDF Text Transcription for ZXMN6A09DN8 (Reference)

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ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) 0.040 @ VGS= 10V 0.060 @ VGS= 4.5V ID (A) 5.6 4.6 Description This new generation of...

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0V 0.060 @ VGS= 4.5V ID (A) 5.6 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.