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ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V(BR)DSS RDS(on) (⍀) 0.040 @ VGS= 4.5V 20 0.055 @ VGS= 2.5V 0.075 @ VGS= 1.8V ID (A) 5.4 4.6 4.0
Description
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.
Features
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Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package
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G S
Applications
• • • • DC-DC converters Power management functions Disconnect switches Motor control
D D G Top view
3,000
D D S
Ordering information
Device ZXMN2B03E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel
Device marking
2B3
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
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