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ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V(BR)DSS RDS(on) (⍀) 0.100 @ VGS= 4.5V 20 0.150 @ VGS= 2.5V 0.200 @ VGS= 1.8V ID (A) 2.4 2.0 1.7
Description
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.
Features
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Low on-resistance Fast switching speed Low gate drive capability SOT23 package
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Applications
• • • • DC-DC converters Power management functions Disconnect switches Motor control
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Ordering information
Device ZXMN2B01FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel
Top view
3,000
Device marking
2B1
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
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