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ZVP3306F - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features

  • 60 Volt VDS.
  • RDS(on)=14Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=14Ω PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F ZVP3306F D S G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -60 -90 -1.6 ± 20 SOT23 UNIT V mA A V mW °C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 60 50 25 8 8 8 8 8 -400 14 -60 -1.5 -3.5 20 -0.
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