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ZVP3306A - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features

  • 60 Volt VDS.
  • RDS(on)=14Ω ZVP3306A D G S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω ZVP3306A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -60 E-Line TO92 Compatible VALUE -160 -1.6 ± 20 UNIT V mA A V mW °C 625 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -400 14 60 50 25 8 8 8 8 8 -60 -1.5 -3.5 20 -0.5 -50 MAX. UNIT CONDITIONS.
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