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XP65CM200EIT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP65CM200E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP65CM200EIT
Manufacturer YAGEO
File Size 272.79 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP65CM200EIT Datasheet

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Full PDF Text Transcription

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XP65CM200EIT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free D BVDSS 650V G RDS(ON) 0.2Ω ID3,4 21.5A S Description XP65CM200E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
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