0.65
1 2 3
6 5 4
0.9±0.1
q
2SC2404 × 2 elements
0.7±0.1
0 to 0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg
(Ta=25˚C)
Ratings 30 20 3 15 150 150.
55 to +150 Unit V V V mA mW ˚C
1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2)
4 : Collector (Tr2) 5 : B.
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Composite Transistors
XP6534
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For high-frequency amplification
2.1±0.1
0.65
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
0.65
1 2 3
6 5 4
0.9±0.1
q
2SC2404 × 2 elements
0.7±0.1
0 to 0.1
0.2±0.