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XP65AN470I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP65AN470 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP65AN470I
Manufacturer YAGEO
File Size 212.63 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP65AN470I Datasheet

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Full PDF Text Transcription

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XP65AN470I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP65AN470 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 650V 0.
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