• Part: XP60SC095DWL
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 735.58 KB
Download XP60SC095DWL Datasheet PDF
YAGEO
XP60SC095DWL
Description XP60SC095D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-247 package is widely preferred for mercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. BVDSS RDS(ON) ID3,6 600V 95mΩ 31A TO-247 (WL) . Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,6 Drain Current, VGS @ 10V3,6 Pulsed Drain Current1 +30 A dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation Total Power Dissipation Single Pulse...