XP60SC095DP
Description
XP60SC095D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS
RDS(ON) ID3,6
The TO-220 package is widely preferred for all mercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
G DS
600V 95mΩ
31A
TO-220(P)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
VGS ID@TC=25℃ ID@TC=100℃ IDM
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,6 Drain Current, VGS @ 10V3,6 Pulsed Drain Current1
+30
A dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche...
