XP4955GM
Description
D2 D2 D1 D1
SO-8
G2
S2 G1 S1
BVDSS RDS(ON) ID
-20V 45mΩ -5.6A
XP4955 series are innovated design and silicon process
D1
D2 technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power
G1
G2 applications.
The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
S1
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1
Total Power Dissipation Linear Derating Factor
-20 +12 -5.6 -4.5 -20
2 0.016
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal...
