XP4951GM
Description
XP4951 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and
D1
D2 fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power
G1
G2 applications.
The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow
S1
S2 technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
-60 +20 -3.4 -2.7 -20
2 0.016 -55 to 150 -55 to 150
V V A A A W W/℃ ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambien...
