XP4525GEM
Description
XP4525 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
N-CH P-CH
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1 G2
S1
40V 28mΩ
6A -40V 42mΩ -5A
D2
S2
Absolute Maximum Ratings@ Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
-40
+16
+16
-5.0
-4.0
-30
V V A A A W W/℃
TSTG
Storage Temperature Range
-55 to...
