XP4525GEH
Description
TO-252-4L
XP4525 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1 G2
40V 28mΩ
15A -40V 42mΩ -12A
D2
S1
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
-40
±16
±16
-12.0
-10.0
-50
V V A A A W W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to...
