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XP3P021YT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3P021YT
Manufacturer YAGEO
File Size 241.41 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3P021YT Datasheet

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Other Datasheets by YAGEO

Part Number Description
XP3P021H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P021M P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P020H P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P020J P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P020M P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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XP3P021YT Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
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