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XP3P021H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3P021H
Manufacturer YAGEO
File Size 179.80 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3P021H Datasheet

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Other Datasheets by YAGEO

Part Number Description
XP3P021M P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P021YT P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P020H P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P020J P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP3P020M P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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XP3P021H Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID -30V 21mΩ -28.
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