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XP3B020M - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

applications.

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Datasheet Details

Part number XP3B020M
Manufacturer YAGEO
File Size 211.42 KB
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3B020M Datasheet

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Full PDF Text Transcription

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XP3B020M Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID3 Description XP3B020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power G1 applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 G2 S1 -30V 20mΩ -8.
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