XP30T10GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

switching performance.

efficient device for use in a wide range of power applications.

YAGEO

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Datasheet Details

Part number	XP30T10GM
Manufacturer	YAGEO
File Size	205.14 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP30T10GM Datasheet
Additional preview pages of the XP30T10GM datasheet.

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Full PDF Text Transcription

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XP30T10GM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant D D D D SO-8 G S S S BVDSS RDS(ON) ID3 Description XP30T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast G switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 100V 55mΩ 4.

Published: Jul 7, 2025 |