Datasheet4U Logo Datasheet4U.com

XP2P053N - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP2P053 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP2P053N
Manufacturer YAGEO
File Size 191.08 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2P053N Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XP2 FPGA fabric Lattice Semiconductor
XP2-17 FPGA fabric Lattice Semiconductor
XP2-30 FPGA fabric Lattice Semiconductor
XP2-40 FPGA fabric Lattice Semiconductor
XP2-5 FPGA fabric Lattice Semiconductor

Other Datasheets by YAGEO

Part Number Description
XP2P052N P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2P020YT P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2P038N P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2P9R0LYT P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP20AN160H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP2P053N Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free S SOT-23S G Description XP2P053 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3 -20V 65mΩ -4.
Published: |