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XP2906EY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP2906 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP2906EY
Manufacturer YAGEO
File Size 197.11 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2906EY Datasheet

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Full PDF Text Transcription

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XP2906EY Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free G2 D1/D2 G1 SOT-26 S2 D1/D2 S1 BVDSS RDS(ON) ID3 20V 35mΩ 4.7A Description XP2906 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercialindustrial applications.
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