• Part: XP2535GEY
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 252.94 KB
Download XP2535GEY Datasheet PDF
YAGEO
XP2535GEY
Description XP2535 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for mercial surface mount applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 20V 32mΩ 4.6A -20V 80mΩ -3.1A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -20 Gate-Source Voltage +8 +8 ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 -3.1 -2.5 -12 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature...