• Part: XP2531GY
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 435.00 KB
Download XP2531GY Datasheet PDF
YAGEO
XP2531GY
Description XP2531 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all mercialindustrial applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 16V 58mΩ 3.5A -16V 125mΩ -2.5A D2 S2 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -16 Gate-Source Voltage +8 +8 ID@TA=25℃ Drain Current3 , VGS @ 4.5V -2.5 ID@TA=70℃ IDM Drain Current3 , VGS @ 4.5V Pulsed Drain Current1 -2 -10 PD@TA=25℃ Total Power...