Datasheet4U Logo Datasheet4U.com

XP2306GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP2306 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP2306GN
Manufacturer YAGEO
File Size 184.63 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2306GN Datasheet

Other Datasheets by YAGEO

Part Number Description
XP2306AGN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2301GN P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2302GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2314GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2318GEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2322GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2332GEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2335YT P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP2344GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP20AN160H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP2306GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Lower On-resistance D ▼ Surface Mount Package ▼ RoHS Compliant S Description SOT-23 G XP2306 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID 20V 35mΩ 5.