XP2306AGN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

General Description

cost-effectiveness device.

The SOT-23 package is widely used for all commercial-industrial applications.

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XP2306AGN n-channel enhancement mode power mosfet by YAGEO - Datasheet Preview

Datasheet Details

Part number	XP2306AGN
Manufacturer	YAGEO
File Size	180.28 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP2306AGN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP2306AGN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower On-resistance D BVDSS RDS(ON) ▼ Surface Mount Package ▼ RoHS Compliant ID S SOT-23 G Description XSemi MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and G cost-effectiveness device. The SOT-23 package is widely used for all commercial-industrial applications. 30V 35mΩ 5A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.