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Silicon Junction FETs
LH03 Series of Products interconvert:
2SK30A
Silicon N-Chinnel Junction FET
Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic switch.
XIAOSHENG
Symbol:
Drain
Gate Source
Package example:
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol Ratings Unit
Gate to Drain voltage
VGDO
-50
V
Gate to Source voltage
VGSO
-50
V
Gate current
IG
10
mA
Allowable power dissipation
PD
250
mW
Junction Temperature
Tj
125
℃
Storage Temperature
Tstg
-55 to +125 ℃
Package
SC-59 SOT-23 TO-92S
* TO-92
TO-18
DSG 312
Electrical Characteristics (Ta=25℃)
Prameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current
IDSS
VDS = 10V, VGS = 0V
0.3
6.
2SK30A Datasheet
