Datasheet4U Logo Datasheet4U.com

2SK3000 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA).
  • 4 V gate drive devices.
  • Small package (MPAK).
  • Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 S Note: Marking is “ZY.
  • ”. Data Sheet R07DS1134EJ0400 Rev.4.00 Jan 10, 2014 1 2 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Rev.

📥 Download Datasheet

Datasheet Details

Part number 2SK3000
Manufacturer Renesas
File Size 157.84 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK3000 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3000 Silicon N-Channel MOSFET Hitachi Semiconductor
2SK3000 N-Channel Enhancement MOSFET Kexin
2SK300 N-Channel Silicon MOSFET Sony Corporation
2SK3001 GaAs HEMT Low Noise Amplifier Hitachi Semiconductor
2SK3002DS N-Channel Enhancement MOSFET Kexin

Other Datasheets by Renesas

Part Number Description
2SK3239 Silicon N-Channel MOSFET
2SK3239L Silicon N-Channel MOSFET
2SK3239R Silicon N-Channel MOSFET
2SK3274 Slilicon N-Channel MOSFET
2SK3446 Silicon N Channel Power MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 S Note: Marking is “ZY–”. Data Sheet R07DS1134EJ0400 Rev.4.00 Jan 10, 2014 1 2 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Reverse drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1 % 2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt ) Ratings 40 ±10 1.0 4.0 1.