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CAB530M12BM3 - All-Silicon Carbide Half-Bridge Module

Key Features

  • Industry Standard 62 mm Footprint.
  • Ultra Low Loss, High-Frequency Operation B.
  • Zero Turn-off Tail Current from MOSFET.
  • Normally-off, Fail-safe Device Operation.
  • Copper Baseplate and Aluminum Nitride Insulator G2 VDS K2 IDS 1200 V V5- 30 A 3 4 5 1 6 7 2.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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D V+ G1 K1 Mid CAB530M12BM3, C CAB530M12BM3T 1200 V, 530 A All-Silicon Carbide, Half-Bridge Module Technical Features • Industry Standard 62 mm Footprint • Ultra Low Loss, High-Frequency Operation B • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator G2 VDS K2 IDS 1200 V V5- 30 A 3 4 5 1 6 7 2 Applications System BAenefits • Railway & Traction • Lightweight, Compact Form-Factor with 62 mm- • EV Charging Infrastructure Format Enables System Retrofit • Industrial Automation & Testing • Increased System Efficiency due to Low Switching & • High-Frequency Power Supplies Conduction Loss5es of SiC 4 3 2 • Renewable Energy Systems & Grid-Tied Inverters • Active Front Ends & AC Inverte