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C3M0160120K1 - Silicon Carbide Power MOSFET

Key Features

  • Optimized package with separate driver source pin.
  • Lower profile TO-247-4 package body.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Reduce cooling requirements.
  • Increase power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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C3M0160120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Package Tab Drain 1 234 Typical Applications • Motor Control • EV Battery Chargers • High Voltage DC/DC Converters • Solar/ESS • UPS • Enterprise PSU Key Parameters Part Number C3M0160120K1 Package TO-247-4L LP Marking C3M0160120K1 Parameter Drain - Source