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C3M0160120J - Silicon Carbide Power MOSFET

Key Features

  • 3rd generation Solicon Carbide (SiC) MOSFET technology.
  • Low impedance package with driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Drain (TAB) Power Source (Pin 3,4,5,6,7) W.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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C3M0160120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Solicon Carbide (SiC) MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Drain (TAB) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.