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C3M0040120K
1200V 40mohm Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Tab Drain
Features
Drain (Pin 1, TAB)
• 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
Gate (Pin 4)
1 234 D SSG
Driver Source (Pin 3)
Power Source (Pin 2)
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
C3M0040120K Datasheet
