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C3M0040120D - Silicon Carbide Power MOSFET

Key Features

  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Part Number C3M0040120D Package TO 247-3 Marking C3M0040120D Typical.

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C3M0040120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Part Number C3M0040120D Package TO 247-3 Marking C3M0040120D Typical Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Key Parameters Parameter Drain - Source Voltage Maximum Gate - Source Voltage Operational Gate-Source Voltage DC C