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WFP840B - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFP840B
Manufacturer Winsemi
File Size 540.51 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP840B Datasheet

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Full PDF Text Transcription for WFP840B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WFP840B. For precise diagrams, tables, and layout, please refer to the original PDF.

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFP840B Silicon N-Channel MOSFET Features � � � � � 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V Ultra-low Gate char...

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tures � � � � � 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.