Datasheet4U Logo Datasheet4U.com

WFP840 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 59nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number WFP840
Manufacturer Winsemi
File Size 736.33 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP840 Datasheet

More Datasheets from Winsemi

Part Number Description
WFP840B Silicon N-Channel MOSFET
WFP840C Power MOSFET
WFP830 Silicon N-Channel MOSFET
WFP830B Silicon N-Channel MOSFET
WFP8N60B Silicon N-Channel MOSFET
WFP13N50 Silicon N-Channel MOSFET
WFP13N50C Silicon N-Channel MOSFET
WFP18N50 Silicon N-Channel MOSFET
WFP3205 Silicon N-Channel MOSFET
WFP3205T Silicon N-Channel MOSFET

Full PDF Text Transcription for WFP840 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WFP840. For precise diagrams, tables, and layout, please refer to the original PDF.

WFP840 Silicon N-Channel MOSFET Features ■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 59nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Ma...

View more extracted text
(Typical 59nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast.