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PFP830E / PFF5N50E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge topology
PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies)
PFP830E / PFF5N50E
500V N-Channel MOSFET
BVDSS = 500 V RDS(ON) = 1.1 Ω ID = 5.0 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3.
PFF5N50E Datasheet
