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PFB8N50 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 25 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFB8N50
Manufacturer Wing On
File Size 0.99 MB
Description N-Channel MOSFET
Datasheet download datasheet PFB8N50 Datasheet

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Full PDF Text Transcription

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Aug 2008 PFI8N50 / PFB8N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 25 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFI8N50/PFB8N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.85 Ω ID = 8.
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