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PFB100N10S - N-Channel Super Junction MOSFET

Features

  •  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 7.2 mΩ (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFB100N10S
Manufacturer Wing On
File Size 690.40 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFB100N10S Datasheet

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Full PDF Text Transcription

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PFP100N10S / PFB100N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 7.2 mΩ (Typ.) @VGS=10V APPLICATION  DC Motor control for E-bike & Power tools  Amplifier and car booster  Load Switch  DC-DC converters PFP100N10S/PFB100N10S 100V N-Channel MOSFET BVDSS = 100 V RDS(on) = 7.2 mΩ ID = 97 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 1 2 3 1.Gate 2. Drain 3. Source D2-PAK 2 1 3 1.Gate 2. Drain 3.
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