Click to expand full text
PFI6N80G / PFB6N80G
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 22.2 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery chargers Switch mode power supply (SMPS) AC adaptors
Green Package
PFI6N80G / PFB6N80G
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) = 2.4 Ω ID = 5.5 A
TO-262
1 2 3
1.Gate 2. Drain 3. Source
Drain
Gate
●
◀▲
● ●
Source
TO-263
2
1 3
1.Gate 2. Drain 3.
PFB6N80G Datasheet
