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WSJT65R075DW - Super-Junction Power MOSFET

General Description

WSJT65R075DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)

Qg among silicon based MOSFETs.

It is particularly suitable for applications require extreme high efficiency and power density.

Key Features

  • Superior FOM RDS(on).
  • Qg.
  • Extremely low switching loss.
  • Integrated ultrafast body diode.
  • 100% avalanche tested 3.

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Datasheet Details

Part number WSJT65R075DW
Manufacturer WeEn
File Size 623.12 KB
Description Super-Junction Power MOSFET
Datasheet download datasheet WSJT65R075DW Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WSJT65R075DW Super-Junction Power MOSFET Rev.02 - 24 July 2024 Product data sheet 1. General description WSJT65R075DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density. h RoHS alogen-Free Lead-Free 2. Features and benefits • Superior FOM RDS(on)*Qg • Extremely low switching loss • Integrated ultrafast body diode • 100% avalanche tested 3. Applications • LLC applications • LEV charger • Server power • LED power 4. Quick reference data Table 1.