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WSJT60R028DW - Super-Junction Power MOSFET

General Description

WSJT60R028DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)

Qg among silicon based MOSFETs.

It is particularly suitable for applications require extreme high efficiency and power density.

Key Features

  • Superior FOM RDS(on).
  • Qg.
  • Extremely low switching loss.
  • Integrated ultrafast body diode.
  • 100% avalanche tested 3.

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Datasheet Details

Part number WSJT60R028DW
Manufacturer WeEn
File Size 649.99 KB
Description Super-Junction Power MOSFET
Datasheet download datasheet WSJT60R028DW Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WSJT60R028DW Super-Junction Power MOSFET Rev.02 - 20 August 2024 Product data sheet 1. General description WSJT60R028DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density. h RoHS alogen-Free Lead-Free 2. Features and benefits • Superior FOM RDS(on) * Qg • Extremely low switching loss • Integrated ultrafast body diode • 100% avalanche tested 3. Applications • Suitable for soft switching topologies • Optimized for phase-shift full bridge(ZVS) • LLC applications • EV charger • Solar 4. Quick reference data Table 1.