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WNSC6D30650CW-A - Silicon Carbide Diode

General Description

Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switched-mode power supplies.

2.

Key Features

  • New 6th Generation Technology.
  • Low Forward Voltage Drop.
  • Low Reverse Leakage Current.
  • High Forward Surge Capability IFSM.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • AEC-Q101 qualified h RoHS alogen-Free AEC - Q101 Qualified 3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC6D30650CW-A Silicon Carbide Diode Rev.01 - 30 May 2023 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits • New 6th Generation Technology • Low Forward Voltage Drop • Low Reverse Leakage Current • High Forward Surge Capability IFSM • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • AEC-Q101 qualified h RoHS alogen-Free AEC - Q101 Qualified 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives • On board charger 4. Quick reference data Table 1.