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WNSC6D02650D-A - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies.

2.

Key Features

  • New 6th Generation Technology.
  • Low Forward Voltage Drop.
  • Low Reverse Leakage Current.
  • High Forward Surge Capability IFSM.
  • Reduced Losses in Associated MOSFET.
  • Reduced EMI.
  • Reduced Cooling Requirements.
  • RoHS Compliant.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC6D02650D-A Silicon Carbide Diode Rev.01 - 7 February 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies. h RoHS alogen-Free AEC - Q101 Qualified 2. Features and benefits • New 6th Generation Technology • Low Forward Voltage Drop • Low Reverse Leakage Current • High Forward Surge Capability IFSM • Reduced Losses in Associated MOSFET • Reduced EMI • Reduced Cooling Requirements • RoHS Compliant • AEC-Q101 qualified 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives • On board charger 4. Quick reference data Table 1.