Datasheet Details
| Part number | WNSC6D20650Y |
|---|---|
| Manufacturer | WeEn |
| File Size | 496.81 KB |
| Description | Silicon Carbide Diode |
| Datasheet |
 WNSC6D20650Y Datasheet
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General Description
Silicon Carbide Schottky diode in a IITO2202L plastic package, designed for high frequency, high efficiency systems.
2.
Key Features
- New 6th Generation Technology.
- Low Forward Voltage Drop.
- Low Reverse Leakage Current.
- High Forward Surge Capability IFSM.
- Reduced Losses in associated MOSFET.
- Reduced EMI.
- Reduced cooling requirements.
- RoHS compliant.
- Insulated package rated at 2500V RMS 3.