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WNSC2M20120R-A - N-Channel Silicon Carbide MOSFET

General Description

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

2.

Key Features

  • Kelvin source configuration.
  • Low specific on-resistance.
  • Optimized dynamic performance.
  • 0V turn-off VGS for simple gate driving.
  • 100% UIS Tested.
  • Easy to parallel.
  • RoHS compliant.
  • Automotive Qualified (AEC-Q101) h RoHS alogen-Free AEC - Q101 Qualified 3.

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Datasheet Details

Part number WNSC2M20120R-A
Manufacturer WeEn
File Size 949.01 KB
Description N-Channel Silicon Carbide MOSFET
Datasheet download datasheet WNSC2M20120R-A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC2M20120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems. 2. Features and benefits • Kelvin source configuration • Low specific on-resistance • Optimized dynamic performance • 0V turn-off VGS for simple gate driving • 100% UIS Tested • Easy to parallel • RoHS compliant • Automotive Qualified (AEC-Q101) h RoHS alogen-Free AEC - Q101 Qualified 3. Applications • Automotive on board chargers • Automotive DC-DC converters • Automotive electric compressor motor drives • HV battery management systems 4. Quick reference data Table 1.