WNSC2M20065R - N-Channel Silicon Carbide MOSFET

WeEn

General Description

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Key Features

Kelvin source configuration.
Low specific on-resistance.
Optimized dynamic performance.
Robust gate design.
0V turn-off VGS for simple gate driving.
100% UIS Tested.
Easy to parallel.
RoHS compliant Lead-Free 3.

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WNSC2M20065R n-channel silicon carbide mosfet by WeEn - Datasheet Preview

Datasheet Details

Part number	WNSC2M20065R
Manufacturer	WeEn
File Size	949.69 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	WNSC2M20065R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC2M20065R N-Channel Silicon Carbide MOSFET Rev.01 - 12 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems. RoHS halogen-Free 2. Features and benefits • Kelvin source configuration • Low specific on-resistance • Optimized dynamic performance • Robust gate design • 0V turn-off VGS for simple gate driving • 100% UIS Tested • Easy to parallel • RoHS compliant Lead-Free 3. Applications • PC/server/telecom power supplies • UPS & Energy storage system • Battery formation instrument • PV MPPT and inverters • EV Charger • Motor Drives 4. Quick reference data Table 1.