WMSC040F12B1P - N-Channel Silicon Carbide MOSFET

WeEn

General Description

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type.

Integrated with NTC temperature sensor.

Key Features

H Bridge topology.
Press-fit pin type.
Low RDSon.
Low Switching Losses.
Low Qg and Crss.
Low Inductive Design 3.

📥 Download Datasheet

WMSC040F12B1P n-channel silicon carbide mosfet by WeEn - Datasheet Preview

Datasheet Details

Part number	WMSC040F12B1P
Manufacturer	WeEn
File Size	912.82 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	WMSC040F12B1P Datasheet

Other Datasheets by WeEn

Part Number	Description
WMSC040F12B1P-B	N-Channel Silicon Carbide MOSFET
WMSC040H12B1P	N-Channel Silicon Carbide MOSFET Module
WMSC040S12B1P	N-Channel Silicon Carbide MOSFET
WMSC040S12B1S-C	N-Channel Silicon Carbide MOSFET
WMSC004H12B2P	N-Channel Silicon Carbide MOSFET
WMSC004H12B2S	N-Channel Silicon Carbide MOSFET
WMSC006H12B2P	N-Channel Silicon Carbide MOSFET
WMSC006H12B2S	N-Channel Silicon Carbide MOSFET
WMSC008H12B1P	N-Channel Silicon Carbide MOSFET
WMSC008H12B2P	N-Channel Silicon Carbide MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

WMSC040F12B1P N-Channel Silicon Carbide MOSFET Module Rev.02 - 24 September 2024 Product data sheet 1. General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor. 2. Features and benefits • H Bridge topology • Press-fit pin type • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design 3. Applications • Power inverters • AC-DC converters • Active power factor correctors • Motor drives h RoHS alogen-Free Lead-Free 4. Quick reference data Table 1.