WMSC008H12B2P - N-Channel Silicon Carbide MOSFET

WeEn

General Description

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type.

Integrated with NTC temperature sensor.

Key Features

Half bridge topology.
Press-fit pin configuration.
Low RDSon-Tj coefficient.
Low Switching Losses.
Low Qg and Crss.
Mimimized circuit impedance.
Improved chip synchronization performance Lead-Free 3.

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WMSC008H12B2P n-channel silicon carbide mosfet by WeEn - Datasheet Preview

Datasheet Details

Part number	WMSC008H12B2P
Manufacturer	WeEn
File Size	973.85 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	WMSC008H12B2P Datasheet

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Full PDF Text Transcription (Reference)

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WMSC008H12B2P N-Channel Silicon Carbide MOSFET Module Rev.02 - 24 September 2024 Product data sheet 1. General description WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor. h RoHS alogen-Free 2. Features and benefits • Half bridge topology • Press-fit pin configuration • Low RDSon-Tj coefficient • Low Switching Losses • Low Qg and Crss • Mimimized circuit impedance • Improved chip synchronization performance Lead-Free 3. Applications • Power inverters • AC-DC converters • DC-DC converters • Active power factor correctors • Motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage ID drain current Ptot total power dissipation Tj.