TPT5609
FEATURES
Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1 Collector-base voltage
V(BR)CBO: 25 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92L
1. EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO h FE VCE(sat) VBE f T
Cob
Test conditions
Ic=10µA, IE=0 Ic=1m A, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500m A IC=800m A, IB=80m A VCE=2V, IC=500m A VCE=2V, IC=500m A VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
25 V 20 V 5V
1 µA 1 µA 60 240 0.5 V 1V 190 MHz 22 p F
CLASSIFICATION OF h FE Rank Range
A 60-120
B 85-170
C 120-240
WEJ ELECTRONIC CO. Http://...
