TPT5609
Features x Excellent linearity of Current Gain x Low saturation voltage
- Halogen free available upon request by adding suffix "-HF"
NPN Epitaxial Silicon Transistor
Maximum Ratings
Symbol VCEO VCBO VEBO IC PC TJ TSTG
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature
Rating 20 25 5.0 1.0 0.75
-55 to +150 -55 to +150
Unit
W OC OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage (IC=10ӴAdc, IE=0)
BVCEO
Collector-Emitter Breakdown Voltage (IC=1m Adc, IB=0)
BVEBO ICBO
Emitter-Base Breakdown Voltage (IE=10u Adc, IC=0)
Collector Cutoff Current (VCB=20Vdc,IE=0)
IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
25 --- --- Vdc
20 --- --- Vdc
5.0 --- --- Vdc
--- --- 1 u Adc
--- --- 1 u Adc h FE VBE(on) VCE(sat) f T Cob
DC...
