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VSSB420S - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

  • TMBS®.
  • Low profile package.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AA (SMB).
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition.

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Datasheet Details

Part number VSSB420S
Manufacturer Vishay
File Size 145.73 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSSB420S Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VSSB420S Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS® • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AA (SMB) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 4.0 A TJ max. 4.0 A 200 V 40 A 0.71 V 150 °C For use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications.
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