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VSSB410S - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

  • Low profile package TMBS ®.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DO-214AA (SMB).

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Datasheet Details

Part number VSSB410S
Manufacturer Vishay
File Size 151.11 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSSB410S Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VSSB410S Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS ® • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DO-214AA (SMB) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4.0 A TJ max. 4.0 A 100 V 80 A 50 mJ 0.61 V 150 °C For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications.
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